Thermal oxidation kinetics describes the process by which a metal oxide film forms on a substrate due to thermal exposure. The Deal-Grove model provides a theor...
Thermal oxidation kinetics describes the process by which a metal oxide film forms on a substrate due to thermal exposure. The Deal-Grove model provides a theoretical framework to predict the oxidation kinetics of a metal film.
The model assumes that the oxidation process occurs through a series of elementary steps, each characterized by a specific activation energy. These steps involve the adsorption of oxygen molecules on the substrate surface, followed by their migration and activation to form oxygen vacancies. These vacancies then recombine with electrons from the substrate, leading to the formation of a new metal oxide layer.
The model takes into account several key parameters, including the activation energy for each step, the mobility of oxygen molecules, and the surface area available for oxidation. By analyzing these parameters, the model can predict the oxidation rate of a metal film as a function of temperature and oxygen partial pressure.
The model has been widely used to explain and predict the oxidation behavior of various materials, including silicon, metals, and semiconductor chips. It provides valuable insights into the factors that influence the oxidation process and can be applied to optimize the performance of electronic devices